发明申请
- 专利标题： Flash memory device and fabrication process thereof, method of forming a dielectric film
- 专利标题（中）： 闪存器件及其制造方法，形成电介质膜的方法
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申请号： US10359701申请日： 2003-02-07
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公开(公告)号： US20030148568A1公开(公告)日： 2003-08-07
- 发明人: Tadahiro Ohmi , Shigetoshi Sugawa
- 优先权： JP2000-115940 20000313
- 主分类号： H01L021/8238
- IPC分类号： H01L021/8238
摘要：
A fabrication process of a flash memory device includes microwave excitation of high-density plasma in a mixed gas of Kr and an oxidizing gas or a nitriding gas. The resultant atomic state oxygen O* or hydrogen nitride radicals NH* are used for nitridation or oxidation of a polysilicon electrode surface. It is also disclosed the method of forming an oxide film and a nitride film on a polysilicon film according to such a plasma processing.