Invention Application
- Patent Title: P-N JUNCTION SENSOR
- Patent Title (中): P-N连接传感器
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Application No.: US10123900Application Date: 2002-04-16
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Publication No.: US20030193073A1Publication Date: 2003-10-16
- Inventor: Harry L. Tuller , Richard Mlcak
- Applicant: Boston MicroSystems, Inc.
- Applicant Address: MA Woburn
- Assignee: Boston MicroSystems, Inc.
- Current Assignee: Boston MicroSystems, Inc.
- Current Assignee Address: MA Woburn
- Main IPC: H01L029/76
- IPC: H01L029/76

Abstract:
A sensor including a p-n junction for subjecting under a reverse electrical bias. A conductive layer is formed across the p-n junction for providing an alternative conductive path across the p-n junction. The conductivity of the conductive layer in the presence of a selected substance in an atmosphere is different than in the absence of the selected substance, wherein the conductivity of the conductive layer is indicative of the presence or absence of the selected substance.
Public/Granted literature
- US06627959B1 P-n junction sensor Public/Granted day:2003-09-30
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