Invention Application
- Patent Title: High voltage resistive structure integrated on a semiconductor substrate
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Application No.: US10420386Application Date: 2003-04-21
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Publication No.: US20030205780A1Publication Date: 2003-11-06
- Inventor: Salvatore Leonardi
- Applicant: STMicroelectronics S.r.l.
- Applicant Address: IT Agrate Brianza
- Assignee: STMicroelectronics S.r.l.
- Current Assignee: STMicroelectronics S.r.l.
- Current Assignee Address: IT Agrate Brianza
- Priority: EP98830638.7 19981023
- Main IPC: H01L029/00
- IPC: H01L029/00
Abstract:
A resistive structure integrated on a semiconductive substrate is described. The resistive structure has a first type of conductivity formed into a serpentine region of conductivity which is opposite to that of the semiconductive substrate. In at least two parallel portions of the serpentine region, there is at least one trench filled with an insulating material.
Public/Granted literature
- US06815795B2 High voltage resistive structure integrated on a semiconductor substrate Public/Granted day:2004-11-09
Information query
