发明申请
- 专利标题： BUFFER LAYERS AND ARTICLES FOR ELECTRONIC DEVICES
- 专利标题（中）： 缓冲层和电子设备文章
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申请号： US10324883申请日： 2002-12-19
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公开(公告)号： US20040121191A1公开(公告)日： 2004-06-24
- 发明人: Mariappan P. Paranthaman , Tolga Aytug , David K. Christen , Roeland Feenstra , Amit Goyal
- 主分类号： B32B009/00
- IPC分类号： B32B009/00
摘要：
Materials for depositing buffer layers on biaxially textured and untextured metallic and metal oxide substrates for use in the manufacture of superconducting and other electronic articles comprise RMnO3, R1nullxAxMnO3, and combinations thereof; wherein R includes an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Th, Dy, Ho, Er, Tm, Yb, Lu, and Y, and A includes an element selected from the group consisting of Be, Mg, Ca, Sr, Ba, and Ra.
公开/授权文献
- US06764770B2 Buffer layers and articles for electronic devices 公开/授权日：2004-07-20
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