Invention Application
US20040121504A1 Process for the fabrication of an inertial sensor with failure threshold 审中-公开
制造具有故障阈值的惯性传感器的过程

Process for the fabrication of an inertial sensor with failure threshold
Abstract:
A process for the fabrication of an inertial sensor with failure threshold includes the step of forming, on top of a substrate of a semiconductor wafer, a sample element embedded in a sacrificial region, the sample element configured to break under a preselected strain. The process further includes forming, on top of the sacrificial region, a body connected to the sample element and etching the sacrificial region so as to free the body and the sample element. The process may also include forming, on the substrate, additional sample elements connected to the body.
Information query
Patent Agency Ranking
0/0