Invention Application
US20040121504A1 Process for the fabrication of an inertial sensor with failure threshold
审中-公开
制造具有故障阈值的惯性传感器的过程
- Patent Title: Process for the fabrication of an inertial sensor with failure threshold
- Patent Title (中): 制造具有故障阈值的惯性传感器的过程
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Application No.: US10650275Application Date: 2003-08-27
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Publication No.: US20040121504A1Publication Date: 2004-06-24
- Inventor: Sarah Zerbini , Angelo Merassi , Guido Spinola Durante , Biagio De Masi
- Applicant: STMicroelectronics S.r.l. , Nokia Corporation
- Applicant Address: IT Agrate Brianza FI Nokia Group
- Assignee: STMicroelectronics S.r.l.,Nokia Corporation
- Current Assignee: STMicroelectronics S.r.l.,Nokia Corporation
- Current Assignee Address: IT Agrate Brianza FI Nokia Group
- Priority: EP02425539.0 20020830
- Main IPC: H01L021/66
- IPC: H01L021/66 ; G01R031/26 ; H01L021/00

Abstract:
A process for the fabrication of an inertial sensor with failure threshold includes the step of forming, on top of a substrate of a semiconductor wafer, a sample element embedded in a sacrificial region, the sample element configured to break under a preselected strain. The process further includes forming, on top of the sacrificial region, a body connected to the sample element and etching the sacrificial region so as to free the body and the sample element. The process may also include forming, on the substrate, additional sample elements connected to the body.
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