发明申请
- 专利标题： Electronic device, method of manufacture of the same, and sputtering target
- 专利标题（中）： 电子器件及其制造方法以及溅射靶
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申请号： US10737121申请日： 2003-12-17
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公开(公告)号： US20040126608A1公开(公告)日： 2004-07-01
- 发明人: Hiroshi Gotoh , Toshihiro Kugimiya , Junichi Nakai , Katsufumi Tomihisa
- 申请人： Kabushiki Kaisha Kobe Seiko Sho(Kobe Steel, Ltd.)
- 申请人地址： JP Kobe-shi
- 专利权人： Kabushiki Kaisha Kobe Seiko Sho(Kobe Steel, Ltd.)
- 当前专利权人： Kabushiki Kaisha Kobe Seiko Sho(Kobe Steel, Ltd.)
- 当前专利权人地址： JP Kobe-shi
- 优先权： JP2002-368786 20021219; JP2003-274288 20030714
- 主分类号： B21C001/00
- IPC分类号： B21C001/00 ; B21F001/00 ; H01B001/00 ; B32B001/00 ; H01F001/16 ; B22D003/00 ; H01F003/00
摘要：
In an electronic device comprising a first electrodes consisting of a metal oxide and a second electrode consisting of an aluminum alloy film directly contacted and electrically connected to the first electrode, the contact interface between the aluminum alloy film and the first electrode is constructed so that at least a part of alloy components constituting the aluminum alloy film exist as a precipitate or concentrated layer. This construction enables direct contact between the aluminum alloy film and the electrode consisting of a metallic oxide and allows elimination of a barrier metal in such an electronic device, and manufacturing technology therefor.