发明申请
US20040129937A1 Organic thin-film transistor manufacturing method, organic thin-film transistor, and organic thin-film transistor sheet 有权
有机薄膜晶体管制造方法,有机薄膜晶体管和有机薄膜晶体管片

  • 专利标题: Organic thin-film transistor manufacturing method, organic thin-film transistor, and organic thin-film transistor sheet
  • 专利标题(中): 有机薄膜晶体管制造方法,有机薄膜晶体管和有机薄膜晶体管片
  • 申请号: US10742194
    申请日: 2003-12-19
  • 公开(公告)号: US20040129937A1
    公开(公告)日: 2004-07-08
  • 发明人: Katsura Hirai
  • 优先权: JPJP2002-376793 20021226
  • 主分类号: H01L035/24
  • IPC分类号: H01L035/24 H01L051/00
Organic thin-film transistor manufacturing method, organic thin-film transistor, and organic thin-film transistor sheet
摘要:
An organic thin-film transistor manufacturing method and an organic thin-film transistor manufactured by the method are disclosed, the method comprising the steps of a) forming a gate electrode on a substrate, b) forming a gate insulating layer on the substrate, c) forming an organic semiconductor layer on the substrate, d) forming an organic semiconductor layer protective layer on the organic semiconductor layer, e) removing a part of the organic semiconductor layer protective layer, and f) forming a source electrode and a drain electrode at portions where the organic semiconductor layer protective layer has been removed, so that the source electrode and drain electrode contacts the organic semiconductor layer.
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