发明申请
- 专利标题： Organic thin-film transistor manufacturing method, organic thin-film transistor, and organic thin-film transistor sheet
- 专利标题（中）： 有机薄膜晶体管制造方法，有机薄膜晶体管和有机薄膜晶体管片
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申请号： US10742194申请日： 2003-12-19
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公开(公告)号： US20040129937A1公开(公告)日： 2004-07-08
- 发明人: Katsura Hirai
- 优先权： JPJP2002-376793 20021226
- 主分类号： H01L035/24
- IPC分类号： H01L035/24 ; H01L051/00
摘要：
An organic thin-film transistor manufacturing method and an organic thin-film transistor manufactured by the method are disclosed, the method comprising the steps of a) forming a gate electrode on a substrate, b) forming a gate insulating layer on the substrate, c) forming an organic semiconductor layer on the substrate, d) forming an organic semiconductor layer protective layer on the organic semiconductor layer, e) removing a part of the organic semiconductor layer protective layer, and f) forming a source electrode and a drain electrode at portions where the organic semiconductor layer protective layer has been removed, so that the source electrode and drain electrode contacts the organic semiconductor layer.