Invention Application
US20040144643A1 Sputtering targets, sputter reactors, methods of forming cast ingots, and methods of forming metallic articles
审中-公开
溅射靶，溅射反应器，成型铸锭的方法和形成金属制品的方法
- Patent Title: Sputtering targets, sputter reactors, methods of forming cast ingots, and methods of forming metallic articles
- Patent Title (中): 溅射靶，溅射反应器，成型铸锭的方法和形成金属制品的方法
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Application No.: US10759444Application Date: 2004-01-14
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Publication No.: US20040144643A1Publication Date: 2004-07-29
- Inventor: Chi tse Wu , Wuwen Yi , Frederick B. Hidden , Susan D. Strothers
- Main IPC: C23C014/32
- IPC: C23C014/32 ; C22F001/08
Abstract:
The invention encompasses a method of forming a metallic article. An ingot of metallic material is provided, and such ingot has an initial thickness. The ingot is subjected to hot forging. The product of the hot forging is quenched to fix an average grain size of less than 250 microns within the metallic material. The quenched material can be formed into a three dimensional physical vapor deposition target. The invention also includes a method of forming a cast ingot. In particular aspects, the cast ingot is a high-purity copper material. The invention also includes physical vapor deposition targets, and magnetron plasma sputter reactor assemblies.
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