Invention Application
US20040147049A1 Low-temperature formation method for emitter tip including copper oxide nanowire or copper nanowire and display device or light source having emitter tip manufactured using the same
失效
包含氧化铜纳米线或铜纳米线的发射极尖端的低温形成方法和使用其制造的具有发射极尖端的显示装置或光源
- Patent Title: Low-temperature formation method for emitter tip including copper oxide nanowire or copper nanowire and display device or light source having emitter tip manufactured using the same
- Patent Title (中): 包含氧化铜纳米线或铜纳米线的发射极尖端的低温形成方法和使用其制造的具有发射极尖端的显示装置或光源
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Application No.: US10746358Application Date: 2003-12-24
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Publication No.: US20040147049A1Publication Date: 2004-07-29
- Inventor: Ho-Young Lee , Yong-Hyup Kim , Woo Yong Sung
- Applicant: Seoul National University Industry Foundation
- Applicant Address: null
- Assignee: Seoul National University Industry Foundation
- Current Assignee: Seoul National University Industry Foundation
- Current Assignee Address: null
- Priority: KR10-2002-84063 20021226
- Main IPC: H01L021/00
- IPC: H01L021/00 ; H01L029/74 ; H01L031/111

Abstract:
Provided are a low-temperature formation method for emitter tips including copper oxide nanowires or copper nanowires and a display device or a light source manufactured using the same. The low-temperature formation method includes preparing a substrate having an exposed copper surface. The copper surface contacts an oxide solution at a low temperature of 100null C. or less to grow copper oxide nanowires on the surface of the substrate. Optionally, a reduction gas or a heat is supplied to the copper oxide nanowires, or plasma processing is performed on the copper oxide nanowires, thereby reducing the copper oxide nanowires to copper nanowires. Thus, emitter tips including copper oxide nanowires or copper nanowires are formed densely at a low temperature such that the emitter tips have a shape and length suitable for emission of electrons.
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