发明申请
US20040206296A1 Method for single crystal growth of perovskite oxides 有权
钙钛矿氧化物单晶生长方法

  • 专利标题: Method for single crystal growth of perovskite oxides
  • 专利标题(中): 钙钛矿氧化物单晶生长方法
  • 申请号: US10845095
    申请日: 2004-05-14
  • 公开(公告)号: US20040206296A1
    公开(公告)日: 2004-10-21
  • 发明人: Ho-Yong LeeJong-Bong LeeTae-Moo Hur
  • 申请人: CERACOMP CO., LTD.
  • 申请人地址: KR Asan-Si
  • 专利权人: CERACOMP CO., LTD.
  • 当前专利权人: CERACOMP CO., LTD.
  • 当前专利权人地址: KR Asan-Si
  • 优先权: KR2000-8916 20000223; KR2001-8685 20010221
  • 主分类号: C30B001/00
  • IPC分类号: C30B001/00
Method for single crystal growth of perovskite oxides
摘要:
An effective, simple and low-cost a method for growing single crystals of perovskite oxideshaving primary and secondary abnormal grain growths according to temperature condition higher than a determined temperature or an atmosphere of heat treatment, involves a perovskite seed single crystal being adjoined to a polycrystal of perovskite oxides and heating the adjoined combination whereby the seed single crystal grows into the polycrystal at the interface therebetween repressing secondary abnormal grain growths inside the polycrystal. 1) The composition ratio of the polycrystal is controlled and/or the specific component(s) of the polycrystal is(are) added in an excess amount compared to the amount of the component(s) of the original composition of the polycrystal, 2) the heating is performed in the temperature range which is over primary abnormal grain growths completion temperature and below secondary abnormal grain growths activation temperature, whereby the seed single crystal grows continuously.
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