Invention Application
- Patent Title: Memory circuit and method for corrupting stored data
- Patent Title (中): 用于破坏存储数据的存储器电路和方法
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Application No.: US10695239Application Date: 2003-10-27
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Publication No.: US20040223359A1Publication Date: 2004-11-11
- Inventor: David C. McClure
- Applicant: STMicroelectronics, Inc.
- Applicant Address: null
- Assignee: STMicroelectronics, Inc.
- Current Assignee: STMicroelectronics, Inc.
- Current Assignee Address: null
- Main IPC: G11C011/00
- IPC: G11C011/00

Abstract:
A method and circuit are disclosed for an integrated circuit having one or more memory cells, each memory cell including first and second p-channel transistor and first and second n-channel transistors configured as cross-coupled logic inverters between first and second reference voltage levels during a normal mode of operation. Power control circuitry is coupled to a source terminal of the first p-channel transistor of each memory cell for providing to the first p-channel transistors the first reference voltage level during the normal mode of operation. This causes a first voltage less than the first reference voltage level to appear at the source terminal of the first p-channel transistors during a data corruption mode of operation wherein data stored in the one or more memory cells is corrupted.
Public/Granted literature
- US06990011B2 Memory circuit and method for corrupting stored data Public/Granted day:2006-01-24
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