Invention Application
US20040228099A1 Localized enhancement of multilayer substrate thickness for high Q RF components 失效
用于高Q RF组件的多层衬底厚度的局部增强

  • Patent Title: Localized enhancement of multilayer substrate thickness for high Q RF components
  • Patent Title (中): 用于高Q RF组件的多层衬底厚度的局部增强
  • Application No.: US10437721
    Application Date: 2003-05-13
  • Publication No.: US20040228099A1
    Publication Date: 2004-11-18
  • Inventor: John C. EstesRodolfo LuceroAnthony M. Pavio
  • Main IPC: H05K007/06
  • IPC: H05K007/06
Localized enhancement of multilayer substrate thickness for high Q RF components
Abstract:
An exemplary system and method for providing differential adjustment of the height of a multilayer substrate in localized areas for improved Q-factor performance of RF devices is disclosed as comprising inter alia: a multilayer substrate (200); an RF component (210) embedded in the substrate (200); a surface mounted component (220); and an RF shield (260) disposed next to the surface mounted component (220), wherein the height of the shield (260) does not extend substantially beyond the height of the surface mounted component (220). Disclosed features and specifications may be variously controlled, configured, adapted or otherwise optionally modified to further improve or otherwise optimize Q, RF performance and/or material characteristics. Exemplary embodiments of the present invention representatively provide for high-performance, high-quality RF devices that may be readily incorporated with existing technologies for the improvement of frequency response, device package form factors, weights and/or other manufacturing, device or material performance metrics.
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