发明申请
US20040228382A1 Semiconductor laser device, manufacturing method thereof, and laser bar locking thereof and laser bar locking apparatus 失效
半导体激光器件及其制造方法,激光棒锁定及激光棒锁定装置

  • 专利标题: Semiconductor laser device, manufacturing method thereof, and laser bar locking thereof and laser bar locking apparatus
  • 专利标题(中): 半导体激光器件及其制造方法,激光棒锁定及激光棒锁定装置
  • 申请号: US10773270
    申请日: 2004-02-09
  • 公开(公告)号: US20040228382A1
    公开(公告)日: 2004-11-18
  • 发明人: Noboru Oshima
  • 申请人: Sharp Kabushiki Kaisha
  • 申请人地址: JP Osaka
  • 专利权人: Sharp Kabushiki Kaisha
  • 当前专利权人: Sharp Kabushiki Kaisha
  • 当前专利权人地址: JP Osaka
  • 优先权: JP2001-397556 20011227
  • 主分类号: H01S005/00
  • IPC分类号: H01S005/00
Semiconductor laser device, manufacturing method thereof, and laser bar locking thereof and laser bar locking apparatus
摘要:
A semiconductor laser chip has an active layer, an allover electrode forming a lower face of the laser chip and a light emitting end surface of the laser chip. A Si thin film is formed on the light emitting end surface of the laser chip. An upper Si thin film is formed on an upper portion of the light emitting end surface and a lower Si thin film is formed on a lower portion thereof. The lower Si thin film is smaller in thickness than the upper Si thin film. Smaller thickness of the lower Si thin film prevents a component of the allover electrode from diffusing into the upper Si thin film that covers the active layer. Thus, decrease of a maximum optical output value is prevented, and reliability of the laser chips is increased.
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