发明申请
US20040232505A1 High speed electron tunneling devices 有权
高速电子隧道装置

  • 专利标题: High speed electron tunneling devices
  • 专利标题(中): 高速电子隧道装置
  • 申请号: US10877874
    申请日: 2004-06-26
  • 公开(公告)号: US20040232505A1
    公开(公告)日: 2004-11-25
  • 发明人: Garret ModdelBlake J. Eliasson
  • 主分类号: H01L021/00
  • IPC分类号: H01L021/00 H01L029/82
High speed electron tunneling devices
摘要:
A detector includes a voltage source for providing a bias voltage and first and second non-insulating layers, which are spaced apart such that the bias voltage can be applied therebetween and form an antenna for receiving electromagnetic radiation and directing it to a specific location within the detector. The detector also includes an arrangement serving as a transport of electrons, including tunneling, between and to the first and second non-insulating layers when electromagnetic radiation is received at the antenna. The arrangement includes a first insulating layer and a second layer configured such that using only the first insulating in the arrangement would result in a given value of nonlinearity in the transport of electrons while the inclusion of the second layer increases the nonlinearity above the given value. A portion of the electromagnetic radiation incident on the antenna is converted to an electrical signal at an output.
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