Invention Application
- Patent Title: High-speed solid-state imaging device capable of suppressing image noise
- Patent Title (中): 能够抑制图像噪声的高速固态成像装置
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Application No.: US10875780Application Date: 2004-06-25
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Publication No.: US20040233309A1Publication Date: 2004-11-25
- Inventor: Yoshitaka Egawa , Yoriko Tanaka , Shinji Ohsawa , Yukio Endo , Hiromi Kusakabe , Nagataka Tanaka
- Priority: JP10-152805 19980602; JP10-152807 19980602; JP11-001139 19990106
- Main IPC: H04N005/335
- IPC: H04N005/335

Abstract:
In a CMOS image sensor, current leakage after a series of noise removing operations has been completed is suppressed in a read operation for each horizontal line, thereby suppressing image noise occurring on the output display screen of the image sensor. There are provided signal storage regions for storing the signals read from the unit cells in the same row selected in the imaging area onto vertical signal lines and horizontal select transistors for sequentially selecting and reading the signals stored in the individual signal storage regions and transferring them to read horizontal signal lines. At least in the period during which the signals are read from the signal storage regions, one of the drain and source of the transistor electrically connected to the signal path between the vertical signal line and horizontal signal line is biased in the reverse direction with respect to the substrate region. Two adjacent ones of the horizontal select transistors form a pair. The horizontal select transistors in each pair share one of the source/drain regions so as to be connected to the horizontal signal line in common, and the others of the source/drain regions are connected to the vertical signal line individually.
Public/Granted literature
- US07292276B2 High-speed solid-state imaging device capable of suppressing image noise Public/Granted day:2007-11-06
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