Invention Application
US20040235398A1 Chemical mechanical planarization method and apparatus for improved process uniformity, reduced topography and reduced defects
审中-公开
化学机械平面化方法和设备，用于改善工艺均匀性，减少地形和减少缺陷
- Patent Title: Chemical mechanical planarization method and apparatus for improved process uniformity, reduced topography and reduced defects
- Patent Title (中): 化学机械平面化方法和设备，用于改善工艺均匀性，减少地形和减少缺陷
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Application No.: US10843265Application Date: 2004-05-10
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Publication No.: US20040235398A1Publication Date: 2004-11-25
- Inventor: Brian S. Thornton , Anil K. Pant
- Main IPC: B24B001/00
- IPC: B24B001/00
Abstract:
A method and apparatus for utilizing an optimized polishing pad to increase planarity and reduce defects in CMP processing. The optimized polishing pad includes a polishing surface to remove material from and maintain a uniform polish rate with respect to a wafer surface. The polishing pad has a hardness between 62 and 98 shore A and a tensile modulus between 3,500 and 35,000 psi. A three-stage CMP process utilizes a hard pad, a first optimized pad and a second optimized pad to increase planarity while reducing surface defects.
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