发明申请
- 专利标题: Integrated circuit and method for fabricating an integrated circuit
- 专利标题(中): 用于制造集成电路的集成电路和方法
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申请号: US10831455申请日: 2004-04-23
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公开(公告)号: US20040245618A1公开(公告)日: 2004-12-09
- 发明人: Albrecht Mayer
- 申请人: Infineon Technologies AG
- 申请人地址: DE Munchen
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Munchen
- 优先权: DE10318847.9 20030425
- 主分类号: H01L021/44
- IPC分类号: H01L021/44 ; H01H073/00 ; H01L023/22 ; H01L029/40
摘要:
In an integrated circuit having a first circuit part and at least one second circuit part, which is assigned to a specific functionality of the first circuit part, on one and the same silicon wafer, of which the first circuit part and the at least one circuit part are arranged in non-overlapping, mutually separate regions of the silicon wafer and are connected to one another via connecting elements or lines, during the fabrication, for each exposure plane, with the exception of the exposure plane used for the fabrication of the connecting elements or lines, use is made in each case of a first exposure mask intended for the first circuit part and a second exposure mask intended for the second circuit part. These first and second exposure masks may be arranged on a common reticle for a respective exposure plane.
公开/授权文献
- US07129157B2 Method for fabricating an integrated circuit 公开/授权日:2006-10-31