发明申请
US20050002130A1 Double layer longitudinal bias structure 有权
双层纵向偏置结构

  • 专利标题: Double layer longitudinal bias structure
  • 专利标题(中): 双层纵向偏置结构
  • 申请号: US10613598
    申请日: 2003-07-03
  • 公开(公告)号: US20050002130A1
    公开(公告)日: 2005-01-06
  • 发明人: Kenichi Takano
  • 申请人: Kenichi Takano
  • 主分类号: G11B5/39
  • IPC分类号: G11B5/39
Double layer longitudinal bias structure
摘要:
It is necessary to stabilize the free layer of GMR or TMR devices by providing a longitudinal bias field. As read tracks become very narrow, this field can drastically reduce the strength of the output signal. This problem has been overcome by adding an additional bias layer. This layer, which may be located either above or below the conventional bias layer, is permanently magnetized in the opposite direction to that of the permanent magnets used to achieve longitudinal stability. Through control of the magnetization strength and location of this additional bias layer, cancellation of much of the field induced in the free layer by the conventional bias layers is achieved.
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