发明申请
- 专利标题: Double layer longitudinal bias structure
- 专利标题(中): 双层纵向偏置结构
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申请号: US10613598申请日: 2003-07-03
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公开(公告)号: US20050002130A1公开(公告)日: 2005-01-06
- 发明人: Kenichi Takano
- 申请人: Kenichi Takano
- 主分类号: G11B5/39
- IPC分类号: G11B5/39
摘要:
It is necessary to stabilize the free layer of GMR or TMR devices by providing a longitudinal bias field. As read tracks become very narrow, this field can drastically reduce the strength of the output signal. This problem has been overcome by adding an additional bias layer. This layer, which may be located either above or below the conventional bias layer, is permanently magnetized in the opposite direction to that of the permanent magnets used to achieve longitudinal stability. Through control of the magnetization strength and location of this additional bias layer, cancellation of much of the field induced in the free layer by the conventional bias layers is achieved.
公开/授权文献
- US07333307B2 Double layer longitudinal bias structure 公开/授权日:2008-02-19
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