发明申请
- 专利标题： Method for processing semiconductor substrate
- 专利标题（中）： 半导体衬底的处理方法
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申请号： US10494530申请日： 2003-09-16
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公开(公告)号： US20050003629A1公开(公告)日： 2005-01-06
- 发明人: Tsukasa Yonekawa , Keisuke Suzuki
- 申请人： Tsukasa Yonekawa , Keisuke Suzuki
- 优先权： JP2002-273854 20020919
- 国际申请： PCT/JP03/11771 WO 20030916
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; H01L21/00 ; H01L21/762 ; H01L29/78
摘要：
A method of processing a semiconductor substrate includes a step of forming a trench (16) in a surface of the substrate, by etching the substrate (W), and a step of rounding a corner (10) of the substrate formed at a mouth of the trench (16), by heat-processing the substrate (W). The step of rounding the corner (10) includes a first heat process performed in a hydrogen gas atmosphere with a process temperature T set to be 850° C.
公开/授权文献
- US06972235B2 Method for processing semiconductor substrate 公开/授权日：2005-12-06