Invention Application
- Patent Title: Integrated circuit having at least one metallization level
- Patent Title (中): 具有至少一个金属化水平的集成电路
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Application No.: US10839770Application Date: 2004-05-05
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Publication No.: US20050006772A1Publication Date: 2005-01-13
- Inventor: Michel Vallet
- Applicant: Michel Vallet
- Applicant Address: FR MONTROUGE
- Assignee: STMICROELECTRONICS SA
- Current Assignee: STMICROELECTRONICS SA
- Current Assignee Address: FR MONTROUGE
- Priority: FR0305433 20030505
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L23/544 ; H01L23/52

Abstract:
An integrated circuit is provided that includes at least one metallization level having a plurality of dummy conductors. At least one of the dummy conductors has an oriented shape made up of a plurality of non-parallel rectangles in mutual contact. In one embodiment, the at least one dummy conductor is in the form of an “L”. In another embodiment, the at least one dummy conductor is in the form of a Latin cross. In yet another embodiment, the at least one dummy conductor is in the form of a “T”.
Public/Granted literature
- US07196421B2 Integrated circuit having at least one metallization level Public/Granted day:2007-03-27
Information query
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