发明申请
- 专利标题： Semiconductor device having mechanism capable of high-speed operation
- 专利标题（中）： 具有能够高速运转的机构的半导体装置
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申请号： US10898969申请日： 2004-07-27
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公开(公告)号： US20050007862A1公开(公告)日： 2005-01-13
- 发明人: Hideto Hidaka
- 申请人： Hideto Hidaka
- 申请人地址： JP Tokyo
- 专利权人： RENESAS TECHNOLOGY CORP.
- 当前专利权人： RENESAS TECHNOLOGY CORP.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2000-035330(P) 20000214; JP2000-179714(P) 20000615
- 主分类号： G11C11/409
- IPC分类号： G11C11/409 ; G11C7/06 ; G11C7/12 ; G11C7/18 ; G11C11/401 ; G11C11/407 ; G11C7/02
摘要：
A semiconductor device comprises a memory cell block and a sense amplifier zone. A selection gate included in the sense amplifier zone is turned on for selectively coupling the memory cell block with the sense amplifier zone. Local drivers are dispersively arranged on a BLI wire transmitting a gate control signal, and a driver is arranged on an end of the BLI wire. The driver pulls down the potential of the BLI wire at a high speed.
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