发明申请
US20050012137A1 Nonvolatile memory cell having floating gate, control gate and separate erase gate, an array of such memory cells, and method of manufacturing
审中-公开
具有浮动栅极，控制栅极和单独的擦除栅极的非易失性存储单元，这种存储单元的阵列以及制造方法
- 专利标题： Nonvolatile memory cell having floating gate, control gate and separate erase gate, an array of such memory cells, and method of manufacturing
- 专利标题（中）： 具有浮动栅极，控制栅极和单独的擦除栅极的非易失性存储单元，这种存储单元的阵列以及制造方法
-
申请号： US10622855申请日： 2003-07-18
-
公开(公告)号： US20050012137A1公开(公告)日： 2005-01-20
- 发明人: Amitay Levi , Pavel Klinger , Bomy Chen , Hieu Tran , Dana Lee , Jack Frayer
- 申请人： Amitay Levi , Pavel Klinger , Bomy Chen , Hieu Tran , Dana Lee , Jack Frayer
- 主分类号： H01L21/8247
- IPC分类号： H01L21/8247 ; H01L27/115 ; H01L29/423 ; H01L29/788 ; H01L21/8238
摘要：
A nonvolatile memory cell having a floating gate for the storage of charges thereon has a control gate and a separate erase gate. The cell is programmed by hot channel electron injection and is erased by poly to poly Fowler-Nordheim tunneling. A method for making an array of unidirectional cells in a planar substrate, as well as an array of bidirectional cells in a substrate having a trench, is disclosed. An array of such cells and a method of making such an array is also disclosed.
信息查询
