发明申请
US20050012151A1 Thin film transistor, electronic device having the same, and method for manufacturing the same
有权
薄膜晶体管，具有该薄膜晶体管的电子器件及其制造方法
- 专利标题： Thin film transistor, electronic device having the same, and method for manufacturing the same
- 专利标题（中）： 薄膜晶体管，具有该薄膜晶体管的电子器件及其制造方法
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申请号： US10821197申请日： 2004-09-01
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公开(公告)号： US20050012151A1公开(公告)日： 2005-01-20
- 发明人: Tetsuji Yamaguchi , Kengo Akimoto , Hiroki Kayoiji , Toru Takayama
- 申请人： Tetsuji Yamaguchi , Kengo Akimoto , Hiroki Kayoiji , Toru Takayama
- 优先权： JP2003-108479 20030411
- 主分类号： H01L21/77
- IPC分类号： H01L21/77 ; H01L21/84 ; H01L27/12 ; H01L27/01
摘要：
An object of the present invention is to provide a method for manufacturing a thin film transistor which enables heat treatment aimed at improving characteristics of a gate insulating film such as lowering of an interface level or reduction in a fixed charge without causing a problem of misalignment in patterning due to expansion or shrinkage of glass. A method for manufacturing a thin film transistor of the present invention comprises the steps of heat-treating in a state where at least a gate insulating film is formed over a semiconductor film on which element isolation is not performed, simultaneously isolating the gate insulating film and the semiconductor film into an element structure, forming an insulating film covering a side face of an exposed semiconductor film, thereby preventing a short-circuit between the semiconductor film and a gate electrode. Expansion or shrinkage of a glass substrate during the heat treatment can be prevented from affecting misalignment in patterning since the gate insulating film and the semiconductor film are simultaneously processed into element shapes after the heat treatment.
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