发明申请
US20050012512A1 Focused ion beam endpoint detection using charge pulse detection electronics
有权
使用充电脉冲检测电子学的聚焦离子束端点检测
- 专利标题： Focused ion beam endpoint detection using charge pulse detection electronics
- 专利标题（中）： 使用充电脉冲检测电子学的聚焦离子束端点检测
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申请号： US10620546申请日： 2003-07-16
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公开(公告)号： US20050012512A1公开(公告)日： 2005-01-20
- 发明人: Sivaramakrishna Kolachina , Srikanth Perungulam
- 申请人： Sivaramakrishna Kolachina , Srikanth Perungulam
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 主分类号： G01Q30/04
- IPC分类号： G01Q30/04 ; G01Q40/02 ; H01J37/305 ; G01R31/305
摘要：
A system and method for detecting a milling endpoint on a semiconductor sample by directing an ion beam from a focused ion beam (FIB) apparatus at the sample and using charge pulse detection electronics (CPDE) components to generate a distribution curve on a histogram display. A preferred configuration of the CPDE components includes a charge preamplifier, a pulse amplifier, a pulse shaper, and a multichannel analyzer (MCA).
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