发明申请
US20050013091A1 MULTI-LAYER BARRIER ALLOWING RECOVERY ANNEAL FOR FERROELECTRIC CAPACITORS
有权
多层障碍物允许用于电容电容器的恢复电极
- 专利标题: MULTI-LAYER BARRIER ALLOWING RECOVERY ANNEAL FOR FERROELECTRIC CAPACITORS
- 专利标题(中): 多层障碍物允许用于电容电容器的恢复电极
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申请号: US10623461申请日: 2003-07-18
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公开(公告)号: US20050013091A1公开(公告)日: 2005-01-20
- 发明人: Andreas Hilliger , Jingyu Lian , Nicolas Nagel , Rainer Bruchhaus , Stefan Gernhardt , Uwe Wellhausen , Bum-Ki Moon , Karl Hornik
- 申请人: Andreas Hilliger , Jingyu Lian , Nicolas Nagel , Rainer Bruchhaus , Stefan Gernhardt , Uwe Wellhausen , Bum-Ki Moon , Karl Hornik
- 主分类号: H01G4/06
- IPC分类号: H01G4/06 ; H01G4/12 ; H01G4/33 ; H01L21/02 ; H01L21/8246 ; H01L27/115
摘要:
A multi-layer barrier for a ferroelectric capacitor includes an outdiffusion barrier layer permeable to both hydrogen and oxygen. The outdiffusion barrier layer covers the ferroelectric of the capacitor. Oxygen passes through the outdiffusion barrier layer into the ferroelectric during an oxygen anneal in order to repair damage to the ferroelectric caused during etching. The outdiffusion barrier layer reduces the decomposition of the ferroelectric by blocking molecules leaving the ferroelectric during the oxygen anneal. The multi-layer barrier also includes a hydrogen barrier layer deposited on the outdiffusion barrier layer after repair of the ferroelectric by the oxygen anneal. The hydrogen barrier layer allows the multi-layer barrier to block the passage of hydrogen into the ferroelectric during back-end processes.
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