发明申请
- 专利标题: GENERATING MASK PATTERNS FOR ALTERNATING PHASE-SHIFT MASK LITHOGRAPHY
- 专利标题(中): 生成用于替代相移屏蔽图的掩模图案
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申请号: US10604373申请日: 2003-07-15
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公开(公告)号: US20050014074A1公开(公告)日: 2005-01-20
- 发明人: Lars Liebmann , Scott Bukofsky , Ioana Graur
- 申请人: Lars Liebmann , Scott Bukofsky , Ioana Graur
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: G03F1/08
- IPC分类号: G03F1/08 ; G03C3/02 ; G03C5/00 ; G03F1/00 ; G03F9/00 ; G06F17/50 ; H01L21/027
摘要:
A method of generating patterns of a pair of photomasks from a data set defining a circuit layout to be provided on a substrate includes identifying critical segments of the circuit layout to be provided on the substrate. Block mask patterns are generated and then legalized based on the identified critical segments. Thereafter, phase mask patterns are generated, legalized and colored. The legalized block mask patterns and the legalized phase mask patterns that have been colored define features of a block mask and an alternating phase shift mask, respectively, for use in a dual exposure method for patterning features in a resist layer of a substrate.