发明申请
US20050014341A1 Method of fabricating complementary bipolar transistors with SiGe base regions
有权
用SiGe基极区制造互补双极晶体管的方法
- 专利标题： Method of fabricating complementary bipolar transistors with SiGe base regions
- 专利标题（中）： 用SiGe基极区制造互补双极晶体管的方法
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申请号： US10822078申请日： 2004-04-08
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公开(公告)号： US20050014341A1公开(公告)日： 2005-01-20
- 发明人: Badih El-Kareh , Scott Balster , Philipp Steinmann , Thomas Scharnagl , Manfred Schiekofer , Carl Willis
- 申请人： Badih El-Kareh , Scott Balster , Philipp Steinmann , Thomas Scharnagl , Manfred Schiekofer , Carl Willis
- 优先权： DE10317096.0 20030414
- 主分类号： H01L21/331
- IPC分类号： H01L21/331 ; H01L21/8228
摘要：
In a method of fabricating complementary bipolar transistors with SiGe base regions the base regions of the NPN and PNP transistors are formed one after the other over two collector regions 20, 14 by epitaxial deposition of crystalline silicon-germanium layers 32a, 36a. With this method the germanium profile of the SiGe layers can be freely selected for both NPN and PNP transistors in thus enabling complementary transistor performance to be optimized individually. The SiGe layers 32a, 36a can be doped with an n-type or p-type dopant during or after deposition of the silicon-germanium layers 32a, 36a.
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