发明申请
- 专利标题： Method for fabricating semiconductor device and method for fabricating semiconductor substrate used in the semiconductor device
- 专利标题（中）： 半导体装置的制造方法及半导体装置的半导体基板的制造方法
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申请号： US10833037申请日： 2004-04-28
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公开(公告)号： US20050014386A1公开(公告)日： 2005-01-20
- 发明人: Kenji Yoneda
- 申请人： Kenji Yoneda
- 专利权人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 优先权： JP2003-277036 20030718
- 主分类号： H01L21/683
- IPC分类号： H01L21/683 ; G03B27/42 ; G03F7/20 ; H01L21/027 ; H01L21/30 ; H01L21/304 ; H01L21/31 ; H01L21/469 ; H01L21/68 ; H01L21/687
摘要：
A wafer is held on a pin chuck, and thereafter a design pattern is transferred to the principal surface of the wafer by exposing an exposure light, which passes through a mask having the design pattern, onto the principal surface of the held wafer. The underlying surface of the wafer has irregularities with cross-sectional cycle lengths of 300 μm or more and depressions with opening diameters of 100 μm or less, and is formed such that an arithmetic mean of depths of the irregularities and depths of the depressions is 200 nm or less. The differences in distance between a focal position of the exposure light and the principal surface of the wafer held on the pin chuck are set at 50% or less of a design rule.
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