发明申请
- 专利标题： Circuits and methods for repairing defects in memory devices
- 专利标题（中）： 用于修复存储器件缺陷的电路和方法
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申请号： US10609312申请日： 2003-06-24
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公开(公告)号： US20050015654A1公开(公告)日： 2005-01-20
- 发明人: Kenneth Marr
- 申请人： Kenneth Marr
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 主分类号： G11C29/00
- IPC分类号： G11C29/00 ; H02H3/05
摘要：
A memory device has a number of memory segments connected to a supply source through a supply control circuit. If one of the memory segments is defective, the supply control circuit isolates the defective memory segment from the supply source. The memory device replaces the defective memory segment with a redundant segment.
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