发明申请
- 专利标题： Photoresist composition
- 专利标题（中）： 光刻胶组成
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申请号： US10916934申请日： 2004-08-12
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公开(公告)号： US20050019696A1公开(公告)日： 2005-01-27
- 发明人: Robert Allen , Gregory Breyta , Phillip Brock , Richard DiPietro , Debra Fenzel-Alexander , Carl Larson , David Medeiros , Dirk Pfeiffer , Ratnam Sooriyakumaran , Hoa Truong , Gregory Wallraff
- 申请人： Robert Allen , Gregory Breyta , Phillip Brock , Richard DiPietro , Debra Fenzel-Alexander , Carl Larson , David Medeiros , Dirk Pfeiffer , Ratnam Sooriyakumaran , Hoa Truong , Gregory Wallraff
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： C08F20/22
- IPC分类号： C08F20/22 ; C08F220/28 ; G03F7/004 ; G03F7/038 ; G03F7/039 ; H01L21/027 ; G03C1/73
摘要：
A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl(CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl(CH3), trifluoromethyl(CF3), difluoromethyl(CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl(CF3), difluoromethyl(CHF2), fluoromethyl(CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.
公开/授权文献
- US07014980B2 Photoresist composition 公开/授权日：2006-03-21