发明申请
- 专利标题: Etching method and apparatus
- 专利标题(中): 蚀刻方法和装置
-
申请号: US10484502申请日: 2002-09-24
-
公开(公告)号: US20050020070A1公开(公告)日: 2005-01-27
- 发明人: Katsunori Ichiki , Kazuo Yamauchi , Hirokuni Hiyama , Seiji Samukawa
- 申请人: Katsunori Ichiki , Kazuo Yamauchi , Hirokuni Hiyama , Seiji Samukawa
- 优先权: JP2001-302538 20010928
- 国际申请: PCT/JP02/09748 WO 20020924
- 主分类号: G21K1/00
- IPC分类号: G21K1/00 ; G21K5/04 ; H01J37/32 ; H01L21/00 ; H01L21/302 ; H01L21/3065 ; H01L21/461 ; H05H3/02
摘要:
An etching apparatus comprises a workpiece holder (21) for holding a workpiece (X), a plasma generator (10, 20) for generating a plasma (30) in a vacuum chamber (3), an orifice electrode (4) disposed between the workpiece holder (21) and the plasma generator (10, 20), and a grid electrode (5) disposed upstream of the orifice electrode (4) in the vacuum chamber (3). The orifice electrode (4) has orifices (4a) defined therein. The etching apparatus further comprises a voltage applying unit (25, 26) for applying a voltage between the orifice electrode (4) and the grid electrode (5) to accelerate ions from the plasma (30) generated by the plasma generator (10, 20) and to pass the extracted ions through the orifices (4a) in the orifice electrode (4), for generating a collimated neutral particle beam having an energy ranging from 10 eV to 50 eV.
公开/授权文献
- US07314574B2 Etching method and apparatus 公开/授权日:2008-01-01