发明申请
US20050023140A1 Process for producing nano-device using potential singular points on substrate
失效
在衬底上使用潜在的奇异点生产纳米器件的方法
- 专利标题： Process for producing nano-device using potential singular points on substrate
- 专利标题（中）： 在衬底上使用潜在的奇异点生产纳米器件的方法
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申请号： US10886056申请日： 2004-07-08
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公开(公告)号： US20050023140A1公开(公告)日： 2005-02-03
- 发明人: Shukichi Tanaka , Hitoshi Suzuki , Toshiya Kamikado , Shinro Mashiko
- 申请人： Shukichi Tanaka , Hitoshi Suzuki , Toshiya Kamikado , Shinro Mashiko
- 优先权： JP2003-372567 20030709
- 主分类号： B82B3/00
- IPC分类号： B82B3/00 ; C25D1/18 ; C25D1/12
摘要：
The present invention provides a process for producing a bottom-up type nano-device in which a reaction is initiated from potential singular points on a substrate, and wherein compound molecules are arranged with regularity and a chain reaction is accelerated utilizing the sequence pattern of the potential singular points, specifically, the process comprises a step of producing potential singular points that involves placing potential singular points on a substrate and a contact step of contacting a compound having a functional group which interacts with the fore-mentioned potential singular points.