发明申请
US20050023645A1 Increased quality factor of a varactor in an integrated circuit via a high conductive region in a well
有权
通过井中的高导电区域增加集成电路中变容二极管的品质因数
- 专利标题： Increased quality factor of a varactor in an integrated circuit via a high conductive region in a well
- 专利标题（中）： 通过井中的高导电区域增加集成电路中变容二极管的品质因数
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申请号： US10918981申请日： 2004-08-16
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公开(公告)号： US20050023645A1公开(公告)日： 2005-02-03
- 发明人: Shye Shapira , Debra Johnson , Shahriar Moinian
- 申请人： Shye Shapira , Debra Johnson , Shahriar Moinian
- 申请人地址： US PA Allentown 18109
- 专利权人： Agere Systems Inc.
- 当前专利权人： Agere Systems Inc.
- 当前专利权人地址： US PA Allentown 18109
- 主分类号： H01L29/93
- IPC分类号： H01L29/93 ; H01L29/94 ; H01L21/20
摘要：
The present invention provides an varactor, a method of manufacture thereof. In an exemplary embodiment, the varactor includes a semiconductor substrate and well of a first and second conductivity type, respectively. A conductive region in the well has a same conductivity type as the well but a lower resistivity than the well. At least a portion of the well is between at least two sides of the conductive region and an area delineated by an outer perimeter of a conductive layer over the well. Such varactors have a lower series resistance and therefore have an increased quality factor.
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