Invention Application
US20050023645A1 Increased quality factor of a varactor in an integrated circuit via a high conductive region in a well
有权
通过井中的高导电区域增加集成电路中变容二极管的品质因数
- Patent Title: Increased quality factor of a varactor in an integrated circuit via a high conductive region in a well
- Patent Title (中): 通过井中的高导电区域增加集成电路中变容二极管的品质因数
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Application No.: US10918981Application Date: 2004-08-16
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Publication No.: US20050023645A1Publication Date: 2005-02-03
- Inventor: Shye Shapira , Debra Johnson , Shahriar Moinian
- Applicant: Shye Shapira , Debra Johnson , Shahriar Moinian
- Applicant Address: US PA Allentown 18109
- Assignee: Agere Systems Inc.
- Current Assignee: Agere Systems Inc.
- Current Assignee Address: US PA Allentown 18109
- Main IPC: H01L29/93
- IPC: H01L29/93 ; H01L29/94 ; H01L21/20
Abstract:
The present invention provides an varactor, a method of manufacture thereof. In an exemplary embodiment, the varactor includes a semiconductor substrate and well of a first and second conductivity type, respectively. A conductive region in the well has a same conductivity type as the well but a lower resistivity than the well. At least a portion of the well is between at least two sides of the conductive region and an area delineated by an outer perimeter of a conductive layer over the well. Such varactors have a lower series resistance and therefore have an increased quality factor.
Public/Granted literature
- US07345354B2 Increased quality factor of a varactor in an integrated circuit via a high conductive region in a well Public/Granted day:2008-03-18
Information query
IPC分类:
