发明申请
US20050024783A1 Method and apparatus for enhancing thermal stability, improving biasing and reducing damage from electrostatic discharge in self-pinned abutted junction heads having self-pinned layer extending under the hard bias layers 失效
用于增强热稳定性的方法和装置,改​​善偏压并减少在具有在硬偏压层下延伸的自固位层的自固定邻接接头中的静电放电的损伤

  • 专利标题: Method and apparatus for enhancing thermal stability, improving biasing and reducing damage from electrostatic discharge in self-pinned abutted junction heads having self-pinned layer extending under the hard bias layers
  • 专利标题(中): 用于增强热稳定性的方法和装置,改​​善偏压并减少在具有在硬偏压层下延伸的自固位层的自固定邻接接头中的静电放电的损伤
  • 申请号: US10629319
    申请日: 2003-07-29
  • 公开(公告)号: US20050024783A1
    公开(公告)日: 2005-02-03
  • 发明人: Hardayal GillWen-Chien HsiaoJih-Shiuan Luo
  • 申请人: Hardayal GillWen-Chien HsiaoJih-Shiuan Luo
  • 主分类号: G11B5/31
  • IPC分类号: G11B5/31 G11B5/33 G11B5/127
Method and apparatus for enhancing thermal stability, improving biasing and reducing damage from electrostatic discharge in self-pinned abutted junction heads having self-pinned layer extending under the hard bias layers
摘要:
A method and apparatus for enhancing thermal stability, improving biasing and reducing damage from electrical surges in self-pinned abutted junction heads. The head includes a self-pinned layer, the self-pinned layer having a first end, a second end and central portion, a free layer disposed over the central portion of the self-pinned layer in a central region and a first and second hard bias layers formed over the first and second ends of the self-pinned layer respectively, the first and second hard bias layer abutting the free layer, the first and second end of the self-pinned layer extending under the hard bias layers at the first and second ends.
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