发明申请
US20050024784A1 Method and apparatus for enhancing thermal stability, improving biasing and reducing damage from electrostatic discharge in self-pinned abutted junction heads having a second hard bias layer disposed away from the free layer
失效
用于增强热稳定性的方法和装置，改善偏压并且减少在具有远离自由层设置的第二硬偏置层的自固定邻接接头中的静电放电的损伤
- 专利标题： Method and apparatus for enhancing thermal stability, improving biasing and reducing damage from electrostatic discharge in self-pinned abutted junction heads having a second hard bias layer disposed away from the free layer
- 专利标题（中）： 用于增强热稳定性的方法和装置，改善偏压并且减少在具有远离自由层设置的第二硬偏置层的自固定邻接接头中的静电放电的损伤
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申请号： US10629323申请日： 2003-07-29
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公开(公告)号： US20050024784A1公开(公告)日： 2005-02-03
- 发明人: Hardayal Gill , Wen-Chien Hsiao , Jih-Shiuan Luo
- 申请人： Hardayal Gill , Wen-Chien Hsiao , Jih-Shiuan Luo
- 主分类号： G11B5/127
- IPC分类号： G11B5/127 ; G11B5/33 ; G11B5/39
摘要：
A method and apparatus for enhancing thermal stability, improving biasing and reducing damage from electrical surges in self-pinned abutted junction heads. The head includes a sandwiched hard bias layer having a first hard bias layer coupled to a free layer and a second, anti-parallel hard bias layer disposed away form the free layer to provide a net longitudinal bias on the free layer.
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