发明申请
US20050024785A1 Method and apparatus for enhancing thermal stability, improving biasing and reducing damage from electrostatic discharge in self-pinned abutted junction heads having a self-pinned bias layer extending beyond the free layer
失效
用于增强热稳定性的方法和装置，改善偏压并且减少在具有延伸超过自由层的自固定偏置层的自固定邻接接头中的静电放电的损伤
- 专利标题： Method and apparatus for enhancing thermal stability, improving biasing and reducing damage from electrostatic discharge in self-pinned abutted junction heads having a self-pinned bias layer extending beyond the free layer
- 专利标题（中）： 用于增强热稳定性的方法和装置，改善偏压并且减少在具有延伸超过自由层的自固定偏置层的自固定邻接接头中的静电放电的损伤
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申请号： US10629529申请日： 2003-07-29
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公开(公告)号： US20050024785A1公开(公告)日： 2005-02-03
- 发明人: Hardayal Gill , Wen-Chien Hsiao , Jih-Shiuan Luo
- 申请人： Hardayal Gill , Wen-Chien Hsiao , Jih-Shiuan Luo
- 主分类号： G11B5/39
- IPC分类号： G11B5/39 ; G11B5/127 ; G11B5/33
摘要：
A method and apparatus for enhancing thermal stability, improving biasing and reducing damage from electrical surges in self-pinned abutted junction heads. The head includes a free layer having a first end and a second end defining a width selected to form a desired trackwidth and an extended self-pinned bias layer extending beyond the ends of the free layer, the self-pinned bias layer extending beyond the free layer increasing the volume of the extended self-pinned bias layer to provide greater thermal stability and stronger pinning of the free layer.
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