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发明申请
US20050024933A1 Process for manufacturing device having selector transistors for storage elements and memory device fabricated thereby 审中-公开
具有用于存储元件的选择晶体管和由其制造的存储器件的制造器件的工艺

Process for manufacturing device having selector transistors for storage elements and memory device fabricated thereby
摘要：
A process for manufacturing a memory device having selector bipolar transistors for storage elements, includes the steps of: in a semiconductor body, forming at least a selector transistor, having at least an embedded conductive region, and forming at least a storage element, stacked on and electrically connected to the selector transistor; moreover, the step of forming at least a selector transistor includes forming at least a raised conductive region located on and electrically connected to the embedded conductive region.
摘要（中）：

一种用于制造具有用于存储元件的选择器双极晶体管的存储器件的方法，包括以下步骤：在半导体本体中，至少形成至少具有嵌入的导电区域的选择晶体管，并形成至少一个存储元件，堆叠在 并电连接到选择晶体管; 此外，形成至少选择晶体管的步骤包括至少形成位于并电连接到嵌入的导电区域的凸起的导电区域。

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