发明申请
- 专利标题： Method of bonding semiconductor devices
- 专利标题（中）： 半导体器件接合方法
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申请号： US10631508申请日： 2003-07-31
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公开(公告)号： US20050025942A1公开(公告)日： 2005-02-03
- 发明人: Grant Kloster , Shriram Ramanathan , Chin-Chang Chen , Paul Fischer
- 申请人： Grant Kloster , Shriram Ramanathan , Chin-Chang Chen , Paul Fischer
- 主分类号： B32B3/00
- IPC分类号： B32B3/00 ; H01L21/762
摘要：
A method of bonding semiconductor devices is disclosed. The method comprises providing a first substrate having a first conductive interconnecting structure formed thereon and a second substrate having a second conductive interconnecting structure formed thereon. A first conductive passivation layer is selectively formed over exposed areas of the first conductive interconnecting structure. A second conductive passivation layer is selectively formed over exposed areas of the second conductive interconnecting structure. The first substrate and the second substrate are bonded together in such a way that the first conductive passivation layer bonds to the second conductive passivation layer to create a passivation-passivation interface.
公开/授权文献
- US07186637B2 Method of bonding semiconductor devices 公开/授权日：2007-03-06
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