发明申请
- 专利标题： Light absorbing layer producing method
- 专利标题（中）： 光吸收层制造方法
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申请号： US10871450申请日： 2004-06-18
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公开(公告)号： US20050028861A1公开(公告)日： 2005-02-10
- 发明人: Satoshi Aoki , Masako Kimura , Masanori Kosugi
- 申请人： Satoshi Aoki , Masako Kimura , Masanori Kosugi
- 专利权人： Honda Giken Kogyo Kabushiki Kaisha
- 当前专利权人： Honda Giken Kogyo Kabushiki Kaisha
- 优先权： WOPCT/JP03/00792 20030128
- 主分类号： H01L31/032
- IPC分类号： H01L31/032 ; H01L31/18 ; H01L31/00
摘要：
A method of producing a light absorbing layer of CIGS for a solar cell by forming a precursor film on a back electrode and treating the precursor film in a selenium atmosphere, wherein an alkali layer is formed on the back electrode by dipping the back electrode in an aqueous solution containing alkali metals and drying and then a laminated precursor is formed on the alkali layer. By applying this method, the alkali layer whose components of Ia-group elements are diffused into the light absorbing layer to improve power conversion efficiency thereof can be easily formed with no fear of denaturing the back electrode and peeling of the layer at the boundary between the light absorbing layer and the back electrode.
公开/授权文献
- US07018858B2 Light absorbing layer producing method 公开/授权日：2006-03-28
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