发明申请
US20050029537A1 Homoepitaxial gallium nitride based photodetector and method of producing
有权
同质外延氮化镓基光电探测器及其制造方法
- 专利标题： Homoepitaxial gallium nitride based photodetector and method of producing
- 专利标题（中）： 同质外延氮化镓基光电探测器及其制造方法
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申请号： US10932127申请日： 2004-09-01
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公开(公告)号： US20050029537A1公开(公告)日： 2005-02-10
- 发明人: Mark D'Evelyn , Nicole Evers , Kanin Chu
- 申请人： Mark D'Evelyn , Nicole Evers , Kanin Chu
- 主分类号： H01L31/0224
- IPC分类号： H01L31/0224 ; H01L31/0304 ; H01L31/108 ; H01L33/00
摘要：
A photodetector (100, 200, 300) comprising a gallium nitride substrate, at least one active layer (104, 302) disposed on the substrate (102, 202, 306), and a conductive contact structure (106, 210, 308) affixed to the active layer (104, 302) and, in some embodiments, the substrate (102, 202, 306). The invention includes photodetectors (100, 200, 300) having metal-semiconductor-metal structures, P-i-N structures, and Schottky-barrier structures. The active layers (104, 302) may comprise Ga1-x-yAlxInyN1-z-w PzAsw, or, preferably, Ga1-xAlxN. The gallium nitride substrate comprises a single crystal gallium nitride wafer and has a dislocation density of less than about 105 cm−2. A method of making the photodetector (100, 200, 300) is also disclosed.