发明申请
- 专利标题： Antifuse structure and method of use
- 专利标题（中）： 防腐结构及使用方法
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申请号： US10931714申请日： 2004-09-01
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公开(公告)号： US20050029622A1公开(公告)日： 2005-02-10
- 发明人: Kenneth Marr , Shubneesh Batra
- 申请人： Kenneth Marr , Shubneesh Batra
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 主分类号： H01L23/525
- IPC分类号： H01L23/525 ; H01L29/00 ; H01L21/44
摘要：
An antifuse structure and method of use are disclosed. According to one embodiment of the present invention a first programming voltage is coupled to a well of a first conductivity type in a substrate of a second conductivity type in an antifuse. A second programming voltage is coupled to a conductive terminal of the second conductivity type in the antifuse to create a current path through an insulator between the conductive terminal and the well to program the antifuse. The first programming voltage may be coupled to an ohmic contact in the well in the antifuse.
公开/授权文献
- US07071534B2 Antifuse structure and method of use 公开/授权日：2006-07-04
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