发明申请
US20050029624A1 Integrated circuit arrangement having PNP and NPN bipolar transistors, and fabrication method
有权
具有PNP和NPN双极晶体管的集成电路装置及其制造方法
- 专利标题: Integrated circuit arrangement having PNP and NPN bipolar transistors, and fabrication method
- 专利标题(中): 具有PNP和NPN双极晶体管的集成电路装置及其制造方法
-
申请号: US10873855申请日: 2004-06-21
-
公开(公告)号: US20050029624A1公开(公告)日: 2005-02-10
- 发明人: Thomas Bottner , Stefan Drexl , Thomas Huttner , Martin Seck
- 申请人: Thomas Bottner , Stefan Drexl , Thomas Huttner , Martin Seck
- 优先权: DE10328008.1 20030621
- 主分类号: H01L21/8228
- IPC分类号: H01L21/8228 ; H01L27/082 ; H01L29/417 ; H01L29/00
摘要:
An explanation is given of, inter alia, an integrated circuit arrangement (100) containing an npn transistor (102) and a pnp transistor (104). Transistors with outstanding electrical properties are produced if the pnp transistor contains a cutout (142) for an edge terminal region (120) and if the edge terminal region (120) has a part near the substrate which is arranged in the cutout (142) and a part remote from the substrate which is arranged outside the cutout (142) and overlaps the base terminal region (139).