发明申请
- 专利标题: Unitary interconnection structures integral with a dielectric layer and fabrication methods thereof
- 专利标题(中): 与介电层一体化的单一互连结构及其制造方法
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申请号: US10932416申请日: 2004-09-02
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公开(公告)号: US20050029664A1公开(公告)日: 2005-02-10
- 发明人: Won-Seok Cho , Soon-Moon Jung , Sung-Bong Kim , Hyung-Shin Kwon
- 申请人: Won-Seok Cho , Soon-Moon Jung , Sung-Bong Kim , Hyung-Shin Kwon
- 优先权: KR2002-442226 20020726
- 主分类号: G11C11/412
- IPC分类号: G11C11/412 ; H01L21/768 ; H01L21/8244 ; H01L27/11 ; H01L23/48 ; H01L23/52 ; H01L29/40
摘要:
An interconnection structure is provided by forming a first damascene interconnect structure that directly connects a first active area in a substrate, a first conductive line on the substrate and/or a first electrode on the substrate with a second active area in the substrate, a second conductive line on the substrate and/or a second electrode on the substrate. A second damascene interconnect structure may directly connect the first active area, the first conductive line and/or the first electrode to the second active area, the second conductive line and/or the second electrode. The first active area, the first conductive line and/or the first electrode connected to the second active area, the second conductive line and/or the second electrode by the first damascene interconnect structure may be different from the first active area, the first conductive line and/or the first electrode and the second active area, the second conductive line and/or the second electrode connected by the second damascene interconnect structure.
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