发明申请
- 专利标题： Apparatus for forming a film by CVD
- 专利标题（中）： 用于通过CVD形成膜的装置
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申请号： US10948342申请日： 2004-09-24
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公开(公告)号： US20050034665A1公开(公告)日： 2005-02-17
- 发明人: Takaharu Kondo , Masafumi Sano , Koichi Matsuda , Makoto Higashikawa
- 申请人： Takaharu Kondo , Masafumi Sano , Koichi Matsuda , Makoto Higashikawa
- 优先权： JP2000-054982 20000229; JP2001-042459 20010219
- 主分类号： C23C16/24
- IPC分类号： C23C16/24 ; C23C16/509 ; C23C16/54 ; C30B25/10 ; H01L21/205 ; H01L31/0376 ; H01L31/04 ; H01L31/18 ; C23C16/00
摘要：
A film, typically a silicon-based film, is formed on a substrate by means of a plasma CVD process using a high frequency wave in a condition where a resistance element made of a different material than that of the substrate is provided on the electric path between the substrate and the earth. The resultant film shows a high quality and an improved adhesion strength while it can be formed at a practically high rate.