Invention Application
- Patent Title: Device and method for protecting gate terminal and lead
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Application No.: US10642417Application Date: 2003-08-15
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Publication No.: US20050035351A1Publication Date: 2005-02-17
- Inventor: Hung-Jen Chu , Hui-Chung Shen
- Applicant: Hung-Jen Chu , Hui-Chung Shen
- Main IPC: H01L21/77
- IPC: H01L21/77 ; H01L21/84 ; H01L27/12 ; H01L21/00

Abstract:
A resist region covering the gate terminal and lead of the gate electrode line and between a passivation layer and a gate insulating layer is used to protect the gate terminal and lead. The resist region is located at a scribing line on margin of the color filter substrate of a panel, thereby the resist region can protect the passivation layer and the gate insulating layer from cracking, and the gate terminal and the lead from corrosion after a portion of the color filter substrate is removed along the scribing line.
Information query
IPC分类: