- 专利标题： Forming film bulk acoustic resonator filters
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申请号： US10939286申请日： 2004-09-10
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公开(公告)号： US20050035420A1公开(公告)日： 2005-02-17
- 发明人: Qing Ma , Li-Peng Wang , Valluri Rao
- 申请人： Qing Ma , Li-Peng Wang , Valluri Rao
- 主分类号： H03H3/02
- IPC分类号： H03H3/02 ; H03H9/17 ; H01L21/00 ; H01L21/4763 ; H01L27/14 ; H03H9/00
摘要：
A film bulk acoustic resonator may be formed with a piezoelectric film having improved quality. The piezoelectric film may be deposited directly onto a single crystal silicon substrate. That substrate may be removed and selectively replaced with a lower electrode to form the film bulk acoustic resonator.
公开/授权文献
- US06940367B2 Forming film bulk acoustic resonator filters 公开/授权日：2005-09-06
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