发明申请
US20050036346A1 Electronic memory, such as flash EPROM, with bitwise-adjusted writing current or/and voltage
有权
电子存储器，如闪存EPROM，具有按位调节的写入电流或/和电压
- 专利标题： Electronic memory, such as flash EPROM, with bitwise-adjusted writing current or/and voltage
- 专利标题（中）： 电子存储器，如闪存EPROM，具有按位调节的写入电流或/和电压
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申请号： US10640928申请日： 2003-08-14
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公开(公告)号： US20050036346A1公开(公告)日： 2005-02-17
- 发明人: Youngweon Kim , Li-Chun Li
- 申请人： Youngweon Kim , Li-Chun Li
- 主分类号： G11C5/14
- IPC分类号： G11C5/14 ; G11C11/34 ; G11C16/04 ; G11C16/06 ; G11C16/12
摘要：
A memory such as a flash EPROM contains writing circuitry (58 and 60) that adjusts how much current or/and voltage is provided to a writing conductor (92) connected to the memory cells (50) of a cell group for simultaneously writing the bits of a bit group such as a word or byte into the cells of that cell group as a function of how many of those bits are in one of a pair of opposite logic states.
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