发明申请
US20050037588A1 Method for manufacturing and structure of semiconductor device with sinker contact region
有权
具有沉降片接触区域的半导体器件的制造和结构的方法
- 专利标题： Method for manufacturing and structure of semiconductor device with sinker contact region
- 专利标题（中）： 具有沉降片接触区域的半导体器件的制造和结构的方法
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申请号： US10939221申请日： 2004-09-10
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公开(公告)号： US20050037588A1公开(公告)日： 2005-02-17
- 发明人: Angelo Pinto , Jeffrey Babcock , Michael Schober , Scott Balster , Christoph Dirnecker
- 申请人： Angelo Pinto , Jeffrey Babcock , Michael Schober , Scott Balster , Christoph Dirnecker
- 主分类号： H01L21/331
- IPC分类号： H01L21/331 ; H01L29/417 ; H01L27/082 ; H01L21/8222
摘要：
A method for manufacturing a semiconductor device includes forming a buried layer of a semiconductor substrate. An active region is formed adjacent at least a portion of the buried layer. A first isolation structure is formed adjacent at least a portion of the buried layer. A second isolation structure is formed adjacent at least a portion of the active region. A base layer is formed adjacent at least a portion of the active region. A dielectric layer is formed adjacent at least a portion of the base layer, and then at least part of the dielectric layer is removed at an emitter contact location and at a sinker contact location. An emitter structure is formed at the emitter contact location. Forming the emitter structure includes etching the semiconductor device at the sinker contact location to form a sinker contact region. The sinker contact region has a first depth. The method may also include forming a gate structure. Forming the gate structure includes etching the sinker contact region thereby increasing the first depth of the sinker contact region to a second depth.