Invention Application
- Patent Title: Process for fabricating strained layers of silicon or of a silicon/germanium alloy
- Patent Title (中): 制造硅或硅/锗合金应变层的工艺
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Application No.: US10882995Application Date: 2004-07-01
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Publication No.: US20050037599A1Publication Date: 2005-02-17
- Inventor: Aomar Halimaoui , Daniel Bensahel
- Applicant: Aomar Halimaoui , Daniel Bensahel
- Applicant Address: FR MONTROUGE
- Assignee: STMICROELECTRONICS S.A.
- Current Assignee: STMICROELECTRONICS S.A.
- Current Assignee Address: FR MONTROUGE
- Priority: FR0307982 20030701
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/324 ; C30B1/00 ; H01L21/425
Abstract:
A process for fabricating a strained layer of silicon or of a silicon/germanium alloy, includes: a) the formation of a layer (2) of silicon or of a silicon/germanium alloy on a layer (1) of a material having a modifiable lattice parameter; and b) the modification of the lattice parameter.
Public/Granted literature
- US07279404B2 Process for fabricating strained layers of silicon or of a silicon/germanium alloy Public/Granted day:2007-10-09
Information query
IPC分类:
